inchange semiconductor isc product specification isc silicon npn power transistor 2SC4550 description collector-emitter sustaining voltage- : v ceo(sus) = 60v(min) high dc current gain- : h fe = 100(min)@ (v ce = 2v , i c = 1.5a) low saturation voltage- : v ce(sat) = 0.3v(max)@ (i c = 4a, i b = 0.2a) b applications designed for use as a driver in dc/dc converters and actuators. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7.0 v i c collector current-continuous 7.0 a i cm collector current-pulse 14 a i b b base current-continuous 3.5 a total power dissipation @t c =25 30 p t total power dissipation @t a =25 2.0 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4550 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 4.0a ; i b = 0.4a, l= 1mh 60 v v cex(sus) collector-emitter sustaining voltage i c = 4.0a ; i b1 = -i b2 = 0.4a, v be(off) =-1.5v, l=180 h,clamped 60 v v ce (sat)- 1 collector-emitter saturation voltage i c = 4a; i b = 0.2a b 0.3 v v ce (sat)- 2 collector-emitter saturation voltage i c = 6a; i b = 0.3a b 0.5 v v be (sat)- 1 base-emitter saturation voltage i c = 4a; i b = 0.2a b 1.2 v v be (sat)- 2 base-emitter saturation voltage i c = 6a; i b = 0.3a b 1.5 v i cbo collector cutoff current v cb = 60v ; i e = 0 10 a i cer collector cutoff current v ce = 60v ; r be = 50 ,t a =125 1.0 ma i cex collector cutoff current v ce = 60v; v be(off) = -1.5v v ce = 60v; v be(off) = -1.5v,t a =125 10 1.0 a ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.7a ; v ce = 2v 100 h fe-2 dc current gain i c = 1.5a ; v ce = 2v 100 400 h fe-3 dc current gain i c = 4.0a ; v ce = 2v 60 c ob output capacitance i e = 0 ; v cb = 10v; f= 1.0mhz 100 pf f t current-gain?bandwidth product i c = 1a ; v ce = 10v 150 mhz switching times t on turn-on time 0.3 s t stg storage time 1.5 s t f fall time i c = 4.0a ,r l = 12.5 , i b1 = -i b2 = 0.2a,v cc 50v 0.3 s ? h fe- 2 classifications m l k 100-200 150-300 200-400 isc website www.iscsemi.cn 2
|
